Tag Archives: laser technology

Tailorable semiconductor laser platform in the 7xx nm regime

Published in: OPTO SPIE 2024 Authors: Andreas Schramm, Luukas Kuusela, Mika Mähönen, Soile Talmila, Ville Vilokkinen, Petteri Uusimaa  Published in: OPTO SPIE 2024 Authors: Andreas Schramm, Luukas Kuusela, Mika Mähönen, Soile Talmila, Ville Vilokkinen, Petteri Uusimaa We report on tailoring capabilities in the 7xx nm wavelength range utilizing GaAsP or InGaAsP quantum wells (QW) embedded in AlGaAs. Laser structures are grown using metal-organic chemical vapor deposition. Wafers and manufactured lasers are thoroughly characterized, and lifetime tests are performed to validate laser reliabilities. Changing QW parameters enables us to tune the wavelength or polarization of the laser emission.   Read the article here

Output beam engineering with 2-step ridge etching

Presented in: SPIE OPTO 2023 Authors: Riina Ulkuniemi, Ville Vilokkinen, Petri Melanen, Petteri Uusimaa    Presented in: SPIE OPTO 2023 Authors: Riina Ulkuniemi, Ville Vilokkinen, Petri Melanen, Petteri Uusimaa   Silicon photonics offers platforms to build mass-producible optical circuits. Extremely small optical components are required for this purpose, so fiber coupled systems are an order of magnitude too large. In order to successfully integrate laser source to the circuits, output beam properties have to be controlled and desired for the purpose. When fabricating single-mode ridge waveguide (RWG) laser diodes, ridge width has to be narrow enough for ensuring single-mode operation. Continue reading →

Optimization and fabrication of 780 nm DFB lasers for quantum systems

Presented in: SPIE Quantum West 2023 Authors: Riina Ulkuniemi, Luukas Kuusela, Timo Aho, Petteri Uusimaa    Presented in: SPIE Quantum West 2023 Authors: Riina Ulkuniemi, Luukas Kuusela, Timo Aho, Petteri Uusimaa   Laser diode solutions for quantum systems have highly variable requirements, depending on the technology and purpose of the laser used in the application – for instance, quantum control of particles or molecules and excitation of the quantum systems. Requirements of the laser systems used in the mentioned applications are highly demanding, such as single-mode operation, frequency stability over operation lifetime and narrow spectral linewidth. Narrow spectral linewidth can be achieved with Continue reading →

High aspect ratio DBR gratings for narrow linewidth red lasers

Presented in: SPIE Quantum West 2023 Authors: Luukas Kuusela, Riina Ulkuniemi, Timo Aho, Petteri Uusimaa    Presented in: SPIE Quantum West 2023 Authors: Luukas Kuusela, Riina Ulkuniemi, Timo Aho, Petteri Uusimaa   In interferometry, spectroscopy, and holography, HeNe lasers or semiconductor lasers with external wavelength stabilization have been widely used to achieve the required narrow linewidth at 633 nm. Semiconductor lasers utilizing wavelength selective grating fabricated on semiconductor chip enable the miniaturization of laser systems while also providing numerous advantages such as low energy consumption, reliability and tunability by temperature and injection current. Moreover, DBR gratings reduce the complexity of the laser system compared Continue reading →

High-power individually addressable visible and MID-IR laser arrays for display and other applications

Published in: SPIE LASE 2022 Authors: Riina Ulkuniemi, Ilpo Suominen, Ville Vilokkinen, Jari Sillanpää, Petteri Uusimaa  Published in: SPIE LASE 2022 Authors: Riina Ulkuniemi, Ilpo Suominen, Ville Vilokkinen, Jari Sillanpää, Petteri Uusimaa Individually addressable laser diode arrays (IABs) have been successfully demonstrated first time in the 90’s. The main commercial success area has been the printing industry and more recently digital press. These laser arrays are typically working at 8xx nm and 9xx nm wavelengths1,2 . Individually addressable laser diode arrays operating in visible region has also been reported3,4. There is an increasing interest in different variants of individual addressable arrays not Continue reading →