Tag: 632.8 nm

Long-lifetime 632.8 nm DBR laser diode solution for HeNe replacement

Scientific papers / 14-pin butterfly, 632.8 nm, DBR, diode laser, helium-neon, HeNe, high reliability, interferometry, metrology, microscopy, on-chip grating, single-frequency, spectroscopy, SPIE, stable operation / March 5, 2026

This paper demonstrates the performance and long-term reliability of Modulight’s 632.8 nm DBR laser diode, providing a compact, stable, and durable alternative to traditional HeNe lasers for precision metrology and interferometric applications.

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Recent advances in visible AlGaInP laser diodes

Scientific papers / 632.8 nm, 650 nm, AlGaInP, AR/VR, biomedical, DBR, DBR laser, digital printing, diode laser, display, Distributed Bragg reflector, GaAs, HeNe alternative, high-power, Modulight authors, OPTO, Photonics West, quantum, quantum computing, red laser, single-frequency, single-mode, SPIE / March 19, 2025

Published in: SPIE OPTO 2025 Authors: R. Ulkuniemi, A. Schramm, S. Talmila, M. Mähönen, L. Kuusela, T. Aho, J. Hämelahti, V. Vilokkinen, P. Sipilä, P. Uusimaa Visible red laser diodes are mostly based on AlGaInP material systems, grown on GaAs. The challenges in manufacturing of the diodes are found in thermal behavior, facet stability, and doping, which must be solved for reaching the best

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Modulight 632.8 nm DBR laser: A Superior Alternative to Traditional HeNe lasers

Press Releases / 632.8 nm, DBR, HeNe replacement, ML6600 / January 2, 2025

Modulight 632.8 nm DBR laser: A Superior Alternative to Traditional HeNe lasers Redefining Laser Technology with Compact and Reliable Alternatives to HeNe Lasers Modulight announces the launch of its 632.8 nm Distributed Bragg Reflector (DBR) semiconductor laser, designed to replace traditional HeNe lasers across a wide range of applications. Leveraging Modulight’s in-house #TailoredLaser capabilities, the

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