Tailorable semiconductor laser platform in the 7xx nm regime

Published in: OPTO SPIE 2024

Authors: Andreas Schramm, Luukas Kuusela, Mika Mähönen, Soile Talmila, Ville Vilokkinen, Petteri Uusimaa

We report on tailoring capabilities in the 7xx nm wavelength range utilizing GaAsP or InGaAsP quantum wells (QW) embedded in AlGaAs. Laser structures are grown using metal-organic chemical vapor deposition. Wafers and manufactured lasers are thoroughly characterized, and lifetime tests are performed to validate laser reliabilities. Changing QW parameters enables us to tune the wavelength or polarization of the laser emission.


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