Recent advances in visible AlGaInP laser diodes

Visible red laser diodes are mostly based on AlGaInP material systems, grown on GaAs. The challenges in manufacturing of the diodes are found in thermal behavior, facet stability, and doping, which must be solved for reaching the best possible performance for the application. Applications for red lasers vary from biomedical to digital printing, AR/VR, display, and quantum. All of these have their specific requirements related to output power, mode behavior, spectral purity, and so forth. In this paper, we present our red laser diode performance utilizing different technologies, covering both single-emitter devices and arrays, single-mode and multi-mode operation. In addition, we have implemented on-chip gratings for both single-frequency operation in single-spatial mode laser diodes as well as wavelength stabilized high-power multi-mode laser diodes. Our capabilities for tailoring wavelengths are within 630-690 nm, targeting the most used and relevant wavelengths. Our single-frequency distributed Bragg reflector (DBR) laser diodes operate in 632.8 nm (HeNe) and 650 nm, whereas wavelength stabilized high-power DBRs are realized in 633-637 nm wavelength range.