Modulight's laser components
Semiconductor laser components from chip to finished package
Modulight manufactures laser components in-house, combining semiconductor material growth, wafer processing, laser chip fabrication, packaging, and testing under one roof. Our vertically integrated production enables rapid development, controlled quality, and tailored solutions from individual laser chips to fiber-coupled modules. These include edge-emitting multimode or single-mode diodes, DBR lasers, single-frequency lasers, DFB lasers, VCSELs, VECSELs, fiber lasers, or solid-state lasers – and combinations of any of these. All available across a broad wavelength range from UV to 3000+ nm.
From semiconductor material to tested laser components
Modulight’s vertically integrated manufacturing covers the key stages of laser component production in-house. We grow and process III-V semiconductor materials, manufacture laser structures in our cleanrooms, and package and test the finished devices in our own production facilities.
This integration gives us direct control over critical manufacturing processes and enables fast iteration from device design and prototyping to volume production.
Epitaxial growth: GaAs and InP materials
Modulight grows III-V semiconductor structures based on GaAs and InP, with controlled layer thickness, composition and doping to achieve the optical and electrical properties required for the laser device.
Wafer processing: Laser chip fabrication
Our cleanroom facilities support semiconductor laser processing from prototype development to volume production. Processes include lithography, etching, metallization and grating fabrication for technologies such as Fabry-Pérot, DBR and DFB lasers.
Packaging & testing
Laser chips are packaged and tested in Modulight’s own production facilities. We offer a range of standard and tailored package configurations, including chip-on-carrier, TO-can, butterfly and fiber-coupled packages.
Laser technologies
Edge-emitting laser diodes
High-power multimode and single-mode edge-emitting laser diodes for applications requiring efficient optical output and flexible packaging.
Fabry-Pérot lasers
FP laser chips and packaged devices across a broad range of wavelengths and power levels.
DBR and DFB lasers
Narrow-linewidth and wavelength-stabilized semiconductor lasers for applications requiring spectral precision and stability.
VCSELs and VECSELs
Surface-emitting semiconductor laser technologies for high-performance and application-specific optical sources.
Laser arrays and bars
Multi-emitter laser bars, stacks and individually addressable arrays for high-power illumination, pumping and other demanding applications.
Gain chips
Semiconductor gain chips for integration into external-cavity and other laser configurations.
Packaging options
- Laser chips
- Laser bars and arrays
- Chip-on-carrier
- TO-can
- Butterfly package
- Fiber-pigtailed
- Multi-chip module
- Tailored packages
Packaging and integration levels
Modulight laser components are available as bare chips and bars as well as packaged and fiber-coupled devices. Packaging can be selected according to optical, electrical, mechanical and environmental requirements.
Wavelength range
From UV to 3000+ nm
Modulight laser components cover a broad wavelength range from UV to 3000+ nm. Semiconductor materials, laser architectures and packaging are selected according to the required wavelength, output power, spectral characteristics and application.
Products by wavelength
- UV and visible lasers (3xx–6xx nm)
- 6xx nm
- 7xx nm
- 8xx nm
- 9xx nm
- 13xx–16xx nm
- 2–3 µm
Examples of Modulight products
Showing 0 products
| Product | Description | Datasheet |
|---|---|---|
| ML1000 | 1310 nm FP laser diode chip for 2.5 Gb/s applications, 7 mW output power | |
| ML1002 | 1310 nm FP laser diode chip for 10 Gb/s applications, 10 mW output power | |
| ML1007 | 1550 nm FP laser diode chip for 2.5 Gb/s applications, 5 mW output power | |
| ML1009 | 1625 nm FP laser diode chip, pulsed, 150 mW output power | |
| ML1010 | 1310 nm DFB fiber pigtailed module for analog applications, 3 mW output power, SC/PC connector, pin layout 2, without isolator, horizontal flange | |
| ML1020 | 1310 nm DFB fiber pigtailed module for analog applications, 3 mW output power, SC/PC connector, pin layout 2, with isolator, horizontal flange | |
| ML1021 | 1310 nm DFB fiber pigtailed module for analog applications, 3 mW output power, SC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1028 | 1310 nm DFB fiber pigtailed module for analog applications, 3 mW output power, FC/APC connector, pin layout 2, with isolator, no flange | |
| ML1030 | 1310 nm FP fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, SC/PC connector, pin layout 1, without isolator, horizontal flange | |
| ML1062 | 1310 nm FP fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, FC/PC connector, pin layout 1, without isolator, horizontal flange | |
| ML1111 | 800 nm 2 W unmounted high-power laser chip for CW operation. 150 um emitter width, 1000 um cavity length. | |
| ML1112 | 905 nm FP laser diode chip, high power | |
| ML1113 | 1310 nm FP fiber pigtailed module for analog applications, 3 mW output power, SC/PC connector, pin layout 2, without isolator, horizontal flange | |
| ML1133 | 1550 nm DFB fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, SC/PC connector, with isolator, horizontal flange | |
| ML1141 | 1550 nm DFB fiber pigtailed module for analog applications, 3 mW output power, SC/PC connector, pin layout 2, without isolator, horizontal flange | |
| ML1161 | 1470 nm DFB fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, SC/PC connector, pin layout 2, with isolator, horizontal flange | |
| ML1177 | 1490 nm DFB fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, SC/PC connector, pin layout 2, with isolator, horizontal flange | |
| ML1210 | 1310 nm DFB TO-can for 2.5 Gb/s applications, 7 mW output power, aspherical lens, pin layout 3 | |
| ML1211 | 1310 nm DFB TO-can for 2.5 Gb/s applications, 7 mW output power, flat lens, pin layout 3 | |
| ML1212 | 1310 nm FP TO-can for 2.5 Gb/s applications, 7 mW output power, aspherical lens, pin layout 3 | |
| ML1213 | 1310 nm FP TO-can for 2.5 Gb/s applications, 7 mW output power, ball lens, pin layout 3 | |
| ML1215 | 1310 nm FP TO-can for 2.5 Gb/s applications, 7 mW output power, flat lens, pin layout 3 | |
| ML1216 | 1430 nm FP TO-can for 1.25 Gb/s applications, 3 mW output power, ball lens, pin layout 3 | |
| ML1217 | 1490 nm DFB TO-can for 2.5 Gb/s applications, 6 mW output power, aspherical lens, pin layout 3 | |
| ML1220 | 1550 nm FP TO-can for 2.5 Gb/s applications, 5 mW output power, aspherical lens, pin layout 3 | |
| ML1221 | 1550 nm FP TO-can for 2.5 Gb/s applications, 5 mW output power, ball lens, pin layout 3 | |
| ML1223 | 1550 nm FP fiber pigtailed module for analog applications, 3 mW output power, SC/PC connector, pin layout 2, without isolator, horizontal flange | |
| ML1233 | 1550 nm FP fiber pigtailed module for analog applications, 3 mW output power, SC/PC connector, pin layout 2, with isolator, horizontal flange | |
| ML1245 | 1310 nm DFB TO-can for 2.5 Gb/s applications, 7 mW output power, flat lens, pin layout 2 | |
| ML1256 | 1490 nm DFB TO-can for 2.5 Gb/s applications, 10 mW output power, flat lens, pin layout 1 | |
| ML1273 | 808 nm 60 W unmounted high-power laser bar for CW operation. | |
| ML1274 | 795 nm 60 W unmounted high-power laser bar for CW operation. | |
| ML1275 | 808 nm 100 W unmounted high-power laser bar for QCW operation. | |
| ML1277 | 808 nm 40 W unmounted high-power laser bar for CW operation. | |
| ML1278 | 795 nm 40 W unmounted high-power laser bar for CW operation. | |
| ML1279 | 808 nm 50 W unmounted high-power laser bar for CW operation. Narrow Divergence Design (NDD). | |
| ML1283 | 1510 nm DFB fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, FC/PC connector, pin layout 2, with isolator, no flange | |
| ML1289 | 1530 nm DFB fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, FC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1299 | 1570 nm DFB fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, FC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1317 | 1590 nm DFB fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, SC/PC connector, pin layout 2, with isolator, horizontal flange | |
| ML1327 | 1610 nm DFB fiber pigtailed module for 2.5 Gb/s applications, 2 mW output power, SC/PC connector, pin layout 2, with isolator, horizontal flange | |
| ML1340 | 120 mW pulsed 1625 nm FP TO-can, flat window, pin layout 3 | |
| ML1344 | 300 mW pulsed 1310 nm FP TO-can, flat window, pin layout 2 | |
| ML1345 | 200 mW pulsed 1550 nm FP TO-can, flat window, pin layout 2 | |
| ML1388 | 635 nm 4 W unmounted high-power laser bar for CW operation. 50 um emitter width, 1000 um cavity length, fill factor 10%. | |
| ML1389 | 635 nm high-performance laser chip with a 50 µm emitter, can be applied for both CW and pulsed applications. Output power 220mW. | |
| ML1399 | 1310 nm DFB fiber pigtailed module for analog applications, 3 mW output power, SC/APC connector, pin layout 2, with double isolator, no flange | |
| ML1408 | 1310 nm FP laser diode chip, pulsed, 100 mW output power | |
| ML1409 | 1550 nm FP laser diode chip, pulsed, 100 mW output power | |
| ML1411 | 1625 nm FP laser diode chip, pulsed, 100 mW output power | |
| ML1452 | 1430 nm FP TO-can for 1.25 Gb/s applications, 3 mW output power, flat lens, pin layout 1 | |
| ML1454 | 1430 nm FP TO-can for 1.25 Gb/s applications, 3 mW output power, flat lens, pin layout 3 | |
| ML1456 | 1550 nm multi-mode single-emitter pulsed laser chip for 4.5 W | |
| ML1465 | High power multimode 690 nm laser chip. | |
| ML1467 | 635 nm 4 W CS-mounted high-power laser bar for CW operation. 10% fill factor, 50 um emitter width. | |
| ML1468 | 635 nm 220 mW multimode high-power laser in a 9 mm TO-can with a flat window. Pin layout 2. Designed for CW and pulsed operation. | |
| ML1469 | 690 nm 350 mW multimode high-power laser in a 9 mm TO-can with a flat window. Designed for CW and pulsed operation. | |
| ML1470 | 1550 nm 400 mW multimode high-power laser in a 9 mm TO-can with a flat window. Designed for CW and pulsed operation. | |
| ML1520 | 635 nm 220 mW multimode high-power laser in a 9 mm TO-can with a flat window. Package includes a monitor photodiode. Pin layout 2. Designed for CW and pulsed operation. | |
| ML1522 | 808 nm FP laser diode chip on C-mount, 2W CW output power | |
| ML1523 | 680 nm, 750 mW fiber-pigtailed laser. 14-pin butterfly package. 200/220 um fiber pigtail, NA=0.22. | |
| ML1524 | 635 nm 500mW high-performance laser chip with150 µm emitter, can be applied for both CW and pulsed applications. | |
| ML1525 | 1650 nm FP laser diode chip, 100 mW output power, for pulsed applications. | |
| ML1526 | 1650 nm FP laser diode in a TO-56 can, pin layout 3, flat window, pulsed, 100 mW output power | |
| ML1527 | 1650 nm FP laser diode in a coaxial fibre pigtail package, pinlayout 2, flat window, 30 mW output power, for pulsed applications | |
| ML1529 | 1550 nm 20 W unmounted high-power laser bar for CW operation. 100 um emitter width, 1000 um cavity length, fill factor 20%. | |
| ML1543 | 1550 nm multi-mode single-emitter CW laser chip for 1 W | |
| ML1559 | 1470 nm DFB fiber pigtailed module for analog applications, 3 mW output power, FC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1587 | 1490 nm DFB fiber pigtailed module for analog applications, 3 mW output power, SC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1619 | 1510 nm DFB fiber pigtailed module for analog applications, 3 mW output power, FC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1649 | 1530 nm DFB fiber pigtailed module for analog applications, 3 mW output power, FC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1679 | 1570 nm DFB fiber pigtailed module for analog applications, 3 mW output power, FC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1709 | 1590 nm DFB fiber pigtailed module for analog applications, 3 mW output power, FC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1726 | 1590 nm DFB fiber pigtailed module for analog applications, 3 mW output power, SC/PC connector, pin layout 2, with isolator, no flange | |
| ML1739 | 1610 nm DFB fiber pigtailed module for analog applications, 3 mW output power, FC/APC connector, pin layout 2, with isolator, horizontal flange | |
| ML1769 | 1550 nm 20 W CS-mounted high-power laser bar for CW operation. 20% fill factor, 100 um emitter width). | |
| ML1771 | 1550 nm 500 mW multimode high-power laser in a 9 mm TO-can with a flat window. Designed for CW and pulsed operation. | |
| ML1803 | 635 nm 400 mW multimode high-power laser in a 9 mm TO-can with a flat window. Designed for CW and pulsed operation. | |
| ML1819 | 632 nm 4 W unmounted high-power laser bar for CW operation. 50 um emitter width, 1000 um cavity length, fill factor 10%. | |
| ML1824 | 1470 nm 20 W CS-mounted high-power laser bar for CW operation. 20% fill factor, 100 um emitter width. | |
| ML1835 | 1470 nm 20 W unmounted high-power laser bar for CW operation. 100 um emitter width, 1000 um cavity length, fill factor 20%. | |
| ML1837 | 632 nm bare die chip with 50 µm emitter, 1000 µm cavity length. Designed for CW operation. Output power 200 mW. | |
| ML1856 | 1550 nm pigtailed butterfly module. Output power 500 mW. | |
| ML1859 | 808nm 2W 14-pin butterfly module. | |
| ML1862 | 635 nm 14-pin butterfly module. Output power 400mW. Output fiber 200/220 um, NA=0.22. | |
| ML1869 | 808 nm 40 W CS-mounted high-power laser bar for CW operation. 30% fill factor, 150 um emitter width. | |
| ML1884 | 650 nm 10 W CS-mounted bar for CW operation. 30% fill factor, 150 um emitter width. | |
| ML1886 | 650 nm 10 W unmounted high-power laser bar for CW operation. 150 um emitter width, fill factor 30%. | |
| ML1892 | 680 nm bare die chip. Designed for CW operation. Output power 500 mW. | |
| ML1894 | 680 nm 7 W CS-mounted bar for CW operation. 20% fill factor, 100 um emitter width. | |
| ML1900 | 632 nm 4 W CS-mounted high-power laser bar for CW operation. 10% fill factor. | |
| ML1917 | 1470 nm chip on a C-mount, designed for CW operation. Output power 1.5 W. | |
| ML1923 | 808 nm FP laser diode chip on C-mount, 5W CW output power | |
| ML1925 | 1490 nm FP single transverse mode laser in 5.6 mm TO-can package for pulsed applications. Output power 180 mW, layout 3, flat window cap, monitoring diode. | |
| ML1931 | 1648 nm DFB laser chip for pulsed applications. Output power 80 mW. | |
| ML1941 | Unmounted 1470 nm single emitter chip. Output power 1.5 W. Emitter width 100 um, cavity length 1 mm. | |
| ML1954 | 1490 nm FP laser diode chip, pulsed, 200 mW output power. | |
| ML1962 | 1310 nm FP fiber pigtailed module for OTDR applications, 85 mW output power, FC/PC connector, pin layout 2, without isolator, horizontal flange | |
| ML1963 | 1550 nm FP fiber pigtailed module for OTDR applications, 65 mW output power, FC/PC connector, pin layout 2, without isolator, horizontal flange | |
| ML1964 | 1625 nm FP fiber pigtailed module for OTDR applications, 35 mW output power, FC/PC connector, pin layout 3, without isolator, horizontal flange | |
| ML1979 | 150 mW pulsed 1625 nm FP TO-can, flat window, pin layout 3 | |
| ML1982 | 650 nm 14-pin butterfly module. Output power 750mW. Output fiber 200/220 um, NA=0.22. | |
| ML2017 | 1470 nm 14-pin butterfly module. Output power 700 mW. Output fiber 200/220 um, NA=0.22. | |
| ML2048 | 1490 nm FP fiber pigtailed module for OTDR applications, 80 mW output power, FC/PC connector, pin layout 2, without isolator, horizontal flange. | |
| ML2085 | 808 nm FP laser diode chip on C-mount, 1W CW output power | |
| ML2147 | 808 nm single-emitter based fiber coupled module. Output power 12 W. Output fiber 200/220 um, NA=0.22, terminated with SMA-905 connector. Includes PD and thermistor. | |
| ML2148 | 635 nm single-emitter based fiber coupled module. Output power 1.6 W. Output fiber pigtail 105/125 um or 200/220 um, NA=0.22, or receptacle port for 200 um NA=0.22 patch cord. | |
| ML2154 | 670 nm single-emitter based fiber coupled module. Output power 2.5 W. Output fiber 200/220 um, NA=0.22. Package includes PD, TEC, and thermistor. | |
| ML2159 | 635 nm single-emitter based fiber coupled module. Output power 1 W. Default output fiber 200/220 um, NA=0.22. Package includes PD, TEC, and thermistor. | |
| ML2160 | 650 nm single-emitter based fiber coupled module. Output power 2 W. Default output fiber 200/220 um, NA=0.22. Package includes PD, TEC, and thermistor. | |
| ML2161 | 680 nm single-emitter based fiber coupled module. Output power 2.5 W. Output fiber 200/220 um, NA=0.22. Package includes PD, TEC, and thermistor. | |
| ML2162 | 650 nm single-emitter based fiber coupled module. Output power 3 W. Default output fiber 200/220 um, NA=0.22. Package includes PD, TEC, and thermistor. | |
| ML2163 | 670 nm single-emitter based fiber coupled module. Output power 3 W. Default output fiber 200/220 um, NA=0.22. Package includes PD, TEC, and thermistor. | |
| ML2164 | 680 nm single-emitter based fiber coupled module. Output power 3 W. Default output fiber 200/220 um, NA=0.22. Package includes PD, TEC, and thermistor. | |
| ML2172 | 808 nm single-emitter based fiber coupled module. Output power 25 W. Output fiber 400/440 um NA=0.22, terminated with SMA-905 connector, or receptacle F-SMA-905 port for 400/440 um NA=0.22 fiber patch cord. Package includes photodiode and thermistor. | |
| ML2197 | 980 nm single-emitter based fiber coupled module. Output power 30 W. Fiber pigtail 200/220 um, NA=0.22, or alternatively receptacle fiber port. Package includes a thermistor and a photodiode. | |
| ML2198 | 980 nm single-emitter based fiber coupled module. Output power 40 W. Fiber pigtail 200/220 um, NA=0.22, or alternatively receptacle fiber port. Package includes a thermistor and a photodiode. | |
| ML2199 | 808 nm single-emitter based fiber coupled module. Output power 30 W. Fiber pigtail 400/440 um, NA=0.22, or alternatively receptacle fiber port. Package includes a thermistor and a photodiode. | |
| ML2200 | 1470 nm single-emitter based fiber coupled module. Output power 12 W. Fiber pigtail 200/220 um, NA=0.22, or alternatively receptacle fiber port. Package includes a thermistor and a photodiode. | |
| ML2201 | 1550 nm single-emitter based fiber coupled module. Output power 10 W. Fiber pigtail 200/220 um, NA=0.22, or alternatively receptacle fiber port. Package includes a thermistor and a photodiode. | |
| ML3110 | EML diode chips for 25 Gb/s NRZ and 50 Gb/s PAM4 digital applications | |
| ML3302 | 760 nm DBR laser chip-on-carrier product | |
| ML3303 | 780.2 nm Distributed Bragg Reflector (DBR) single-frequency laser diode with a monolithic structure with separate gain and grating sections, locking the emission to a single frequency. | |
| ML3304 | 795.0 nm Distributed Bragg Reflector (DBR) single-frequency laser diode with a monolithic structure with separate gain and grating sections, locking the emission to a single frequency. | |
| ML3305 | 935 nm DBR laser chip-on-carrier product for single-frequency operation. It's part of Modulight's in-house DBR laser technology lineup. | |
| ML3307 | 785 nm tapered amplifier chip-on-carrier product | |
| ML3308 | 78x nm DBR MOPA - A Distributed Bragg Reflector laser with a monolithically integrated tapered amplifier (TA) | |
| ML3600 | 940 nm VCSEL array. | |
| ML3803 | 40-emitter array at 650 nm wavelength. | |
| ML4011 | 1545 nm 80 mW DFB chip-on-carrier | |
| ML4072 | 780 nm curved stripe gain chip on carrier. Also known as semiconductor optical amplifier (SOA) or reflective semiconductor optical amplifier (RSOA). | |
| ML4075 | 1550 nm curved stripe gain chip on carrier. Also known as semiconductor optical amplifier (SOA) or reflective semiconductor optical amplifier (RSOA). | |
| ML4790-760 | 760 nm 8000 mW multimode QCW laser in a 9.0 mm TO-can | |
| ML5050 | 1530 nm 15 mW DFB laser in 14-pin butterfly package. Package includes PD, thermistor, TEC. PM fiber with FC/APC connector. | |
| ML5060 | 785 nm DBR laser diode in 14-pin BFY package. Package includes PD, thermistor, TEC. SM fiber output. | |
| ML5073 | 633 nm 200 mW (pulsed) DBR stabilized multimode laser in 14-pin butterfly package. Package includes PD, thermistor and TEC. Free-space or fiber coupled. | |
| ML5122 | 976 nm, 250 mW FBG stabilized laser for pumping applications. 14-pin butterfly package with single-mode fiber pigtail. | |
| ML5138 | 976 nm, 150 mW FBG stabilized laser for pumping applications. 14-pin butterfly package with single-mode fiber pigtail. | |
| ML5142 | 1480 nm FBG wavelength-stabilized pump laser diode in a 14-pin butterfly package, delivering 370 mW through a polarization-maintaining single-mode fiber. | |
| ML5156 | 976 nm, 100 mW FBG stabilized laser for pumping applications. 14-pin butterfly package with single-mode fiber pigtail. | |
| ML5213 | 976 nm, 400 mW FBG stabilized laser for pumping applications. 14-pin butterfly package with single-mode fiber pigtail. | |
| ML5532-1310 | 1310 nm, 180 mW pulsed FP laser for OTDR applications. Coaxial package with multimode fiber pigtail. | |
| ML5532-1490 | 1490 nm, 70 mW pulsed FP laser for OTDR applications. Coaxial package with single-mode fiber pigtail. | |
| ML5631-1625 | 1625 nm, 80 mW pulsed DFB laser for OTDR applications. 14-pin butterfly package with single-mode fiber pigtail, terminated with FC-UPC connector. | |
| ML5632-1310 | 1310 nm, 180 mW pulsed FP laser for OTDR applications. 14-pin butterfly package with single-mode fiber pigtail. | |
| ML5632-1550 | 1550 nm, 125 mW pulsed FP laser for OTDR applications. 14-pin butterfly package with single-mode fiber pigtail, terminated with FC-UPC connector. | |
| ML5632-1625 | 1625 nm, 90 mW pulsed FP laser for OTDR applications. 14-pin butterfly package with single-mode fiber pigtail, terminated with FC-UPC connector. | |
| ML5723-689 | 689 +/- 3 nm single-emitter based fiber coupled module. Output power 1.6 W. Fiber pigtail 200/220 um, NA=0.22, SMA-905 connector. Package includes a monitoring photodiode, TEC, thermistor and green aiming beam. | |
| ML5740-658 | 658 nm single-emitter based fiber coupled module. Output power 2.5 W. Fiber pigtail 200/220 um, NA=0.22, SMA-905 connector. Package includes a monitoring photodiode, TEC, and thermistor. | |
| ML6600 | ML6600 is a cloud-powered laser solution platform with variants to supports end-user applications such as Flow Cytometry, Quantum, Life Sciences, Metrology. ML6600 can host multiple built-in lasers representing Modulight’s unique wavelength range from UV to 3000+ nm and technologies including edge-emitting diode lasers, VECSELs, DPSSLs, and fiber lasers. | |
| ML6601 | 780.2 nm single-frequency DBR laser system with narrow linewidth, high beam quality and low intensity noise, designed for precision applications such as quantum technologies and spectroscopy. | |
| ML6602 | 532 nm single-frequency VECSEL laser for Ba ion gate seed applications in trapped-ion quantum computing, offering high power, narrow linewidth and low intensity noise. | |
| ML6603 | 760.1 nm single-frequency DBR laser system with narrow linewidth, high beam quality and low intensity noise, designed for precision applications such as quantum technologies and spectroscopy. | |
| ML6604 | 795 nm single-frequency DBR laser system with narrow linewidth, high beam quality and low intensity noise, designed for precision applications such as quantum technologies and spectroscopy. | |
| ML6605 | 355 nm UV laser source for flow cytometry, confocal microscopy, genomics, proteomics and semiconductor metrology, offering excellent beam quality, stability and narrow linewidth. | |
| ML6606 | 553 nm single-frequency VECSEL laser for two-step photoionization of neutral barium in trapped-ion quantum computing applications, with narrow linewidth, low intensity noise and high beam quality. | |
| ML6607 | 493 nm single-frequency VECSEL laser for Ba⁺ ion Doppler cooling, offering narrow linewidth, low intensity noise and high beam quality for trapped-ion quantum computing. | |
| ML6608 | 935 nm single-frequency DBR laser system with narrow linewidth, high beam quality and low intensity noise, designed for precision applications such as quantum technologies and spectroscopy. | |
| ML6609 | 349 nm UV laser source for flow cytometry, microscopy, genomics, proteomics, and semiconductor inspection and metrology, with excellent beam quality and stability. | |
| ML6612 | The ML6612 is a 1064 nm single‑mode ytterbium fiber laser designed for applications requiring high beam quality, excellent stability, and reliable CW or modulated operation. | |
| ML6613 | The ML6613 is a 1550 nm erbium fiber laser engineered for telecom, sensing, and scientific applications requiring low noise, high stability, and reliable single‑mode output performance. | |
| ML6614 | The ML6614 is a high‑power 1940 nm thulium fiber laser optimized for applications in biomedical, mid‑IR pumping, pollution monitoring, and remote sensing, offering up to 40 W of stable single‑mode output. | |
| ML6615 | The ML6615 is a mid‑infrared fiber laser tunable in the 2.7–3.0 µm range, designed for environmental sensing, soft‑tissue applications, and materials processing requiring strong mid‑IR absorption. | |
| ML6626 | ML6626 is a 935 nm laser system using a MOPA design, consisting of a DBR laser as the master oscillator and a tapered amplifier TA as the power amplifier. | |
| ML6639 | ML6639 is a 780 nm laser system using a MOPA design, consisting of a DBR laser as the master oscillator and a tapered amplifier TA as the power amplifier. | |
| ML6640 | A high-performance flow cytometry laser engine offering focused, noise-free monochromatic output across 3-4 selectable wavelengths (349, 405, 488, 638, 561 nm). Beams are steered via Modulight Cloud, reducing on-site service visits. | |
| ML6645 | The ML6645 is a high‑performance VECSEL laser source built on the ML6600 platform, offering multimode, single‑mode, and single‑frequency operation across a wide 460–630 nm range (yellow-orange). It delivers several watts of output power with excellent beam quality, low noise, wavelength tunability, and industry‑leading stability, enabling demanding applications from life sciences and microscopy to quantum technologies. | |
| ML6660 | The ML6660 is a high-stability, 785 nm single-frequency laser designed for spectroscopy, built on DBR technology to deliver precise wavelength control and strong, clean single-mode power. | |
| ML6710i | ML6710i is an ophthalmic laser device designed for retinal treatments. The 689 nm laser is controlled intuitively from iPad app – the wireless connection allows flexibility for the treatment setup. | |
| ML7710 | ML7710 - Medical laser system suitable for various applications. Includes easy-to-use touch screen UI, multiple individually addressable output fibers, aiming beam, smart internal calibration module, foot/hand switch, and much more. Supports all known photosensitizer wavelenghts such as: 630, 635, 652, 665, 689, 753 nm but also many other wavelengths are available between UV...3000+ nm. | |
| ML8500 | ML8500 - Automated illumination system for sequential illumination of multi-well sample plates. Can host up to 6 internal Modulight lasers, includes temperature & CO2 control, touch-screen interface, adjustable irradiance & dose, and remote illumination program creation on PC. Fluorescence measurement/imaging functionality optional. Example wavelengths: 488 nm, 520 nm, 630 nm, 635 nm, 652 nm, 672 nm, 689 nm, 753 nm, 800 nm. | |
| Modulight Illumination Kit (MLAKIT) | Modulight’s illumination kit (MLAKIT) is an accessory for uniformly illuminating well plates, petri dishes, and many more sample stages. Working seamplessly with Modulight lasers, it provides with accurate and easily controlled lighting of your biomedical samples. |
Need a laser outside the standard portfolio?
Modulight can tailor semiconductor structures, laser designs, wavelengths, power levels and packaging to meet application-specific requirements. Our vertically integrated manufacturing enables development from proof of concept through qualification and volume production.
Customer Case: ESA (European Space Agency)
Fiber pigtailed laser diodes are used in European Space Agency (ESA) – for the Soil Moisture and Ocean Salinity (SMOS) satellite which was launched on 2nd of November 2009. Modulight lasers, designed and manufactured in Finland, are an essential part of the optical harness of the MIRAS (Microwave Imaging Radiometer using Aperture Synthesis) instrument in the satellite. Modulight supplied >70 lasers to this instrument that controls the synchronization of the distributed microwave antenna elements of the satellite and thereby the whole remote sensing functionality. Read more »
Frequently Asked Questions
What laser components does Modulight offer?
Modulight offers semiconductor laser components ranging from individual laser chips and gain chips to laser bars, arrays, packaged laser diodes and fiber-coupled modules. Technologies include edge-emitting laser diodes, Fabry-Pérot, DBR, DFB, VCSEL and VECSEL lasers
What semiconductor materials does Modulight use for laser components?
Modulight grows and processes III-V semiconductor materials including gallium arsenide (GaAs) and indium phosphide (InP). Semiconductor structures are designed with controlled layer thickness, composition and doping to achieve the required optical and electrical properties.
What wavelengths are available?
Modulight laser components cover a broad wavelength range from UV to 3000+ nm. The semiconductor material, laser architecture and packaging can be selected according to the required wavelength, output power, spectral characteristics and application.
What packaging options are available?
Laser components are available at different levels of integration, from bare chips and laser bars to packaged and fiber-coupled devices. Packaging options include chip-on-carrier, TO-can, butterfly, fiber-pigtailed and multi-chip modules, as well as tailored packages.
Can Modulight tailor a laser component for a specific application?
Yes. Modulight can tailor semiconductor structures, laser designs, wavelengths, power levels and packaging to meet application-specific requirements. The vertically integrated manufacturing process supports development from proof of concept through qualification and volume production.
Does Modulight manufacture laser components in-house?
Yes. Modulight’s vertically integrated manufacturing covers semiconductor material growth, wafer processing, laser chip fabrication, packaging and testing in its own production facilities. This provides direct control over key manufacturing processes from device development to production
Where are Modulight laser components manufactured?
Modulight laser components are manufactured at the company’s own laser manufacturing facility in Tampere, Finland, Europe. Modulight USA supports sales and customer relationships in the United States, while the products are manufactured in Finland.
What applications are Modulight laser components used for?
Modulight laser components are used in applications including optical communication, data centers, Raman spectroscopy, medical and life science instrumentation, ophthalmology, flow cytometry, quantum technologies and fiber sensing.